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LMBT2222BDW1T1G

Part No LMBT2222BDW1T1G
Manufacturer Leshan Radio
Catalog OEM Parts (J - L)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Win Source Part Number 1070281-LMBT2222BDW1T1G
Categories OEM Parts(J-L)
Manufacturer Leshan Radio
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian LMBT2222BDW1T1G CAD Model

Description

The LMBT2222BDW1T1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Leshan Radio. It is designed for use in a wide range of switching and amplification applications. Due to its versatile characteristics and ease of use, it is frequently used in various electronic circuits, including signal amplification, switching, and driver stages.

Applications:

  • Low-Noise Amplifiers: Used in low-noise amplifier circuits to amplify weak signals with minimal added noise.
  • Switching Circuits: Employed as a switching element in various digital and analog circuits.
  • Driver Stages: Used to drive larger loads, such as relays and LEDs.
  • Oscillator Circuits: Implemented in oscillator circuits to generate periodic signals.
  • General Purpose Amplification: Used for general amplification purposes in a variety of electronic circuits.

Features:

  • NPN Transistor: NPN polarity for standard circuit configurations.
  • Low Saturation Voltage: Minimizes power dissipation in switching applications.
  • High Current Gain (hFE): Provides good amplification characteristics.
  • Fast Switching Speed: Enables efficient switching in high-speed circuits.
  • Surface Mount Package: Facilitates easy assembly on printed circuit boards (PCBs).
  • RoHS Compliant: Complies with Restriction of Hazardous Substances (RoHS) directive.

Benefits:

  • Versatile Application: Suitable for a wide range of applications due to its general-purpose characteristics.
  • Efficient Switching: Low saturation voltage ensures efficient switching performance.
  • Good Amplification: High current gain provides adequate amplification for various signal levels.
  • Simplified Assembly: Surface mount package simplifies PCB assembly and reduces manufacturing costs.
  • Reliable Performance: Robust design ensures reliable operation under various operating conditions.
  • Environmentally Friendly: RoHS compliance ensures that the device is free from hazardous substances.

Additional Details:

The LMBT2222BDW1T1G typically has a collector-emitter breakdown voltage (VCEO) of around 40V. Its collector current (IC) is typically rated at 600mA. The power dissipation is generally around 350mW. It is available in a SOT-363 (SC-70) package, making it suitable for high-density PCB designs. The operating temperature range typically spans from -55°C to +150°C. The device's performance characteristics make it a suitable choice for both switching and amplification applications in diverse electronic systems.

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Shipping Information

Shipped from HK warehouse
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