The KTC3295-B-RTK/P is a silicon NPN epitaxial planar transistor manufactured by KEC (Korea Electronics Co., Ltd.). It is designed for general-purpose amplification and switching applications, particularly in consumer electronics and signal processing circuits.

Applications

• General-purpose amplification
• Switching circuits
• Signal processing circuits
• Consumer electronics
• Audio amplifiers

Features

• High Current Gain (hFE)
• Low Collector-Emitter Saturation Voltage (VCE(sat))
• High Transition Frequency (fT)
• Surface Mount Device (SMD) package
• Pb-free (Lead-free)
• Available in various gain selections

Benefits

• Efficient amplification of weak signals.
• Reduced power loss during switching operations.
• Suitable for high-frequency applications.
• Easy to integrate into automated assembly lines.
• Environmentally friendly due to its Pb-free design.
• Provides design flexibility to optimize circuit performance.

Additional Details

The KTC3295-B-RTK/P transistor features a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation (PC) of 200mW. The transition frequency (fT) is typically around 180MHz. The 'B' in the part number indicates a specific hFE (current gain) range. The operating and storage temperature range is typically -55°C to +150°C. This transistor is commonly found in various electronic devices, including audio amplifiers, signal processing circuits, and control systems. It offers a good balance of performance and cost-effectiveness. The high current gain allows it to amplify weak signals effectively. The low saturation voltage minimizes power dissipation, contributing to overall energy efficiency. The SMD package enables easy integration into modern circuit board designs, reducing assembly time and costs. The Pb-free construction ensures compliance with environmental regulations.