The IXTQ88N28T is a high-performance Power MOSFET from IXYS, designed for demanding power switching applications. This N-channel enhancement mode MOSFET leverages an advanced power MOSFET process to achieve exceptional efficiency and ruggedness. Its characteristics make it well-suited for use in a variety of high-power applications.

Applications:

• High-power switch-mode power supplies (SMPS)
• Motor drives and control systems
• Solid-state relays (SSRs)
• Induction heating systems
• High-frequency power inverters

Features:

• High blocking voltage (V_DSS = 280V)
• Ultra-low on-resistance (R_DS(on)) for minimal conduction losses
• High continuous drain current (I_D = 88A)
• Fast switching speed for high-frequency operation
• Avalanche energy rated for increased robustness
• TO-247 package for efficient heat dissipation

Benefits:

• High system efficiency due to extremely low R_DS(on)
• Reduced cooling requirements due to low power dissipation
• Increased reliability and ruggedness due to avalanche capability
• Improved performance in high-frequency applications
• Simplified thermal management with the TO-247 package

Additional Details:

The IXTQ88N28T boasts a drain-source voltage (V_DSS) rating of 280V and a continuous drain current (I_D) rating of 88A. The device's ultra-low on-resistance minimizes power loss during switching, leading to higher overall system efficiency and reduced heat generation. The fast switching speed enables efficient operation in high-frequency applications, while the avalanche energy rating provides protection against voltage transients and ensures robust performance. The gate threshold voltage (V_GS(th)) typically falls between 2V and 4V. Supplied in a TO-247 package, the MOSFET can be easily mounted and cooled with a heat sink. Proper thermal management is critical to achieving optimal performance and reliability. This MOSFET is well-suited for applications requiring efficient power switching, high blocking voltage, and high current handling capability.