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Same model may have multiple batches, images only for reference.
IXTP1N100 Real Image
Same model may have multiple batches, images only for reference.

IXTP1N100

Part No IXTP1N100
Manufacturer IXYS
Catalog FETs - Single
Description High Voltage MOSFET | MOSFET N-CH 1000V 1.5A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 1.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 11Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 14.5nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191280-IXTP1N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP1N100 CAD Model

Description

The IXYS IXTP1N100 is a MOSFET that has a transistor polarity of N-Channel.

  • Transistor Polarity: N-Channel
  • Package: TO-220AB
  • Category: Discrete Semiconductor Product
  • Supply and Demand Status: Balanced
  • Manufacturer: IXYS

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6424 $60.3512
31+ $3.8092 $118.0852
47+ $3.6902 $173.4394
65+ $3.5712 $232.1280
84+ $3.4521 $289.9764
112+ $3.0949 $346.6288
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