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MCH6351-TL-W

Part No MCH6351-TL-W
Manufacturer ON Semiconductor
Catalog FETs - Single
Description P-Channel Power MOSFET | MOSFET P-CH 12V 9A MCPH6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 12V
Id - Continuous Drain Current 9A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 16.9mOhm at 4.5A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs 20.5nC at 4.5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 2200pF at 6V
Power Dissipation (Maximum) 1.5W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 6-MCPH
Manufacturer Package 6-SMD, Flat Leads
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1220721-MCH6351-TL-W
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MCH6351-TL-W CAD Model

Description

ON Semiconductor MCH6351-TL-W - P-Channel Power MOSFET

The MCH6351-TL-W is a high-performance P-Channel Power MOSFET from ON Semiconductor, designed to offer efficient power management within a compact package. This device is particularly suitable for load switch and power management applications within a wide range of electronic equipment, including mobile phones, portable devices, and other battery-powered systems.

With its low on-resistance and high-speed switching capabilities, the MCH6351-TL-W enhances the overall efficiency of electronic circuits, reducing power losses and improving battery life in portable applications. The MOSFET operates at a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -6A, making it a robust choice for handling moderate power levels.

The device is housed in a compact SOT-346 (SC-59) package, which not only saves valuable board space but also ensures a minimal footprint without sacrificing performance. The MCH6351-TL-W is designed with an advanced trench technology that provides superior RDS(on) characteristics, translating to lower conduction losses and better thermal performance.

Additionally, the MOSFET features a gate-source voltage (VGS) of ±8V and a low threshold voltage, which allows for operation at lower gate drive voltages, further optimizing the power consumption for the end application. It also has a fast switching speed, which is essential for high-frequency power switching applications.

The MCH6351-TL-W from ON Semiconductor is RoHS compliant, adhering to environmental standards and regulations. This makes it not only an efficient choice for designers looking to enhance their power management solutions but also a responsible one with respect to environmental considerations.

In summary, the ON Semiconductor MCH6351-TL-W P-Channel Power MOSFET is an excellent choice for designers who need a reliable, efficient, and space-saving component for their power management and load switch applications in portable electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5024 $50.2400
245+ $0.4123 $101.0135
380+ $0.3994 $151.7720
520+ $0.3865 $200.9800
670+ $0.3736 $250.3120
900+ $0.3350 $301.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,400 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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