IXTH22N50P Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 22A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 270mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2630pF at 25V
Power Dissipation (Maximum) 350W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191251-IXTH22N50P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH22N50P CAD Model

Description

The IXYS MOSFET is a N-Channel transistor designed for use in Discrete Semiconductor Products.

  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 22A
  • Maximum Rds On: 270mOhm @ 11A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 5.5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2630pF @ 25V
  • Power Dissipation (Maximum): 350W
  • Package: TO-247-3
  • Manufacturer Pack Quantity: 30
  • MSL Level: 1 (Unlimited)
  • Supply and Demand Status: limited.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.4935 $53.9740
10+ $11.0716 $110.7160
14+ $10.7256 $150.1584
20+ $10.3796 $207.5920
25+ $10.0336 $250.8400
34+ $8.9957 $305.8538
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 24 pieces
MOQ: 4 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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