The IXYS IXTH12N100 is an N-channel MOSFET transistor with a TO-247-3 package.

• Vds Drain-Source Breakdown Voltage: 1000V
• Continuous Drain Current: 12A
• Rds On (Maximum) @ Id, Vgs: 1.05Ohm @ 6A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 4.5V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V
• Gate Source Voltage (Maximum): ±20V
• Input Capacitance (Ciss) (Maximum) @ Vds: 4000pF @ 25V
• Package: TO-247
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Manufacturer Pack Quantity: 30
• Maximum Power Dissipation: 300W
• Operating Temperature: -55°C to 150°C