IXTH12N100 Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.05Ohm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 170nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4000pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191249-IXTH12N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH12N100 CAD Model

Description

The IXYS IXTH12N100 is an N-channel MOSFET transistor with a TO-247-3 package.

  • Vds Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 12A
  • Rds On (Maximum) @ Id, Vgs: 1.05Ohm @ 6A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4.5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 4000pF @ 25V
  • Package: TO-247
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Manufacturer Pack Quantity: 30
  • Maximum Power Dissipation: 300W
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2599 $67.7970
70+ $1.8537 $129.7590
110+ $1.7968 $197.6480
150+ $1.7386 $260.7900
195+ $1.6803 $327.6585
260+ $1.5071 $391.8460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 35,300 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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