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IXTA3N100D2

Name: IXTA3N100D2
Brand: IXYS
SKU: 608551
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTA3N100D2
Manufacturer	IXYS
Catalog	FETs - Single
Description	Depletion Mode MOSFETs \| MOSFET N-CH 1000V 3A D2PAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	1000V
Id - Continuous Drain Current	3A
Rds On (Maximum) at Id, Vgs	5.5Ohm at 1.5A, 0V
Gate Charge (Qg) (Maximum) at Vgs	37.5nC at 5V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1020pF at 25V
FET Feature	Depletion Mode
Power Dissipation (Maximum)	125W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	TO-263 (IXTA)
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1191239-IXTA3N100D2
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTA3N100D2 CAD Model

Description

IXTA3N100D2 is a depletion mode N-channel MOSFET designed by IXYS.

Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current: 3A
Maximum Power Dissipation: 125W
Maximum Rds On: 5.5Ohm @ 1.5A and 0V
Gate Charge: 37.5nC @ 5V
Input Capacitance: 1020pF @ 25V
Package: TO-263 (IXTA)
Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
4+	$16.0875	$64.3500
9+	$13.2000	$118.8000
14+	$12.7875	$179.0250
19+	$12.3751	$235.1269
25+	$11.9625	$299.0625
33+	$10.7250	$353.9250

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,150 pieces

MOQ: 4 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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