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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 3A
Rds On (Maximum) at Id, Vgs 5.5Ohm at 1.5A, 0V
Gate Charge (Qg) (Maximum) at Vgs 37.5nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1020pF at 25V
FET Feature Depletion Mode
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191239-IXTA3N100D2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA3N100D2 CAD Model

Description

IXTA3N100D2 is a depletion mode N-channel MOSFET designed by IXYS.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 3A
  • Maximum Power Dissipation: 125W
  • Maximum Rds On: 5.5Ohm @ 1.5A and 0V
  • Gate Charge: 37.5nC @ 5V
  • Input Capacitance: 1020pF @ 25V
  • Package: TO-263 (IXTA)
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.4887 $52.4435
12+ $8.6061 $103.2732
18+ $8.3372 $150.0696
25+ $8.0682 $201.7050
33+ $7.7993 $257.3769
43+ $6.9925 $300.6775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 295 pieces
MOQ: 5 pcs
Order Increment : 1 Stück
*Need More Quantity? *Request a Bulk Quantity Quotation?
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