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Same model may have multiple batches, images only for reference.
IXTA1N100 Real Image
Same model may have multiple batches, images only for reference.

IXTA1N100

Part No IXTA1N100
Manufacturer IXYS
Catalog FETs - Single
Description High Voltage MOSFET | MOSFET N-CH 1000V 1.5A TO-263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 1.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 11Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 14.5nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191235-IXTA1N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTA1N100 CAD Model

Description

IXTA1N100 is a MOSFET transistor manufactured by IXYS.

  • Win Source Part Number: 1191235-IXTA1N100
  • Suitable for: Power supplies, motor drives, and welding equipment
  • Maximum Power Dissipation: 54W
  • Drain-Source Breakdown Voltage: 1000V

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Quantity Unit Price Ext. Price
10+ $5.4167 $54.1670
23+ $4.4445 $102.2235
35+ $4.3056 $150.6960
48+ $4.1667 $200.0016
63+ $4.0278 $253.7514
84+ $3.6111 $303.3324
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Availability: 1,600 pieces
MOQ: 10 pcs
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