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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 1.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 11Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 14.5nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191235-IXTA1N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTA1N100 CAD Model

Description

IXTA1N100 is a MOSFET transistor manufactured by IXYS.

  • Win Source Part Number: 1191235-IXTA1N100
  • Suitable for: Power supplies, motor drives, and welding equipment
  • Maximum Power Dissipation: 54W
  • Drain-Source Breakdown Voltage: 1000V

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.0667 $60.6670
23+ $4.9778 $114.4894
35+ $4.8223 $168.7805
48+ $4.6667 $224.0016
63+ $4.5111 $284.1993
84+ $4.0444 $339.7296
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,600 pieces
MOQ: 10 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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