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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series TrenchT2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 65 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA130
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1037988-IXTA130N065T2
Ultra Librarian 3D Model Ultra Librarian IXTA130N065T2 CAD Model

Description

The IXTA130N065T2 from IXYS is a high-performance N-channel MOSFET that provides high-speed switching and low conduction losses.

  • Features: High efficiency and reliability
  • Applications: Motor control, power supplies, and inverters.
  • Performance: Excellent performance and low power dissipation

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