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Same model may have multiple batches, images only for reference.
IXSH30N60B2D1 Real Image
Same model may have multiple batches, images only for reference.

IXSH30N60B2D1

Part No IXSH30N60B2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 48A 250W TO247
Datasheet
IXSH30N60B2D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 48A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 24A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 550μJ (off)
Input Type Standard
Gate Charge 50nC
Turn-on and Turn-off delay time 30ns/130ns
Testing Conditions 400V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr) 30ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049700-IXSH30N60B2D1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXSH30N60B2D1 CAD Model

Description

The IXSH30N60B2D1 is an IGBT transistor that is designed for through-hole mounting.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 250W
  • Maximum Collector-Emitter Saturation Voltage: 2.5V @ 15V, 24A
  • Package: TO-247AD package
  • Status: obsolete
  • Supply and Demand Status: balanced

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