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Same model may have multiple batches, images only for reference.
IXLF19N250A Real Image
Same model may have multiple batches, images only for reference.

IXLF19N250A

Part No IXLF19N250A
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 2500V 32A 250W I4PAC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 2500V
Maximum Current Collector 32A
Collector-emitter saturation voltage(Max) 3.9V @ 15V, 19A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 15mJ (on), 30mJ (off)
Input Type Standard
Gate Charge 142nC
Testing Conditions 1500V, 19A, 47 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ISOPLUS i4-PAC
Win Source Part Number 1049690-IXLF19N250A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXLF19N250A CAD Model

Description

The IXYS IXLF19N250A IGBT from IXYS is a high-performance transistor designed for use in power electronics systems.

  • Maximum Collector-Emitter Breakdown Voltage: 2500V
  • Maximum Current Collector: 32A
  • Maximum Power Dissipation: 250W
  • Collector-Emitter Saturation Voltage: 3.9V @ 15V, 19A
  • Package: ISOPLUS i4-PAC
  • Supply and Demand Status: Limited

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