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Same model may have multiple batches, images only for reference.
IXGH35N120C Real Image
Same model may have multiple batches, images only for reference.

IXGH35N120C

Part No IXGH35N120C
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 70A 300W TO247AD
Datasheet
IXGH35N120C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 70A
Pulsed Collector Current 140A
Collector-emitter saturation voltage(Max) 4V @ 15V, 35A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 3mJ (off)
Input Type Standard
Gate Charge 170nC
Turn-on and Turn-off delay time 50ns/150ns
Testing Conditions 960V, 35A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049615-IXGH35N120C
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH35N120C CAD Model

Description

The IXGH35N120C is a through-hole IGBT transistor manufactured by IXYS.

  • Collector-emitter breakdown voltage: 1200V
  • Maximum current collector: 70A
  • Total switching energy: 3mJ
  • Turn-on and turn-off delay time: 50ns/150ns
  • Gate charge: 170nC
  • Collector-emitter saturation voltage: 4V @ 15V and 35A
  • Status: obsolete (EOL)
  • Temperature range: -55°C to 150°C (TJ)
  • Package: TO-247AD (IXGH)
  • Maximum power dissipation: 300W
  • Categorized under: discrete semiconductor products
  • Popularity: medium

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