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Same model may have multiple batches, images only for reference.
IXGH31N60D1 Real Image
Same model may have multiple batches, images only for reference.

IXGH31N60D1

Part No IXGH31N60D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 150W TO247AD
Datasheet
IXGH31N60D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 31A
Maximum Power Dissipation 150W
Total Switching Energy(Ets) 6mJ (off)
Input Type Standard
Gate Charge 80nC
Turn-on and Turn-off delay time 15ns/400ns
Testing Conditions 480V, 31A, 10 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049604-IXGH31N60D1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH31N60D1 CAD Model

Description

The IXYS IXGH31N60D1 is a through-hole IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a collector current of 60A.

  • Reverse recovery time: 25ns
  • Gate charge: 80nC
  • Total switching energy: 6mJ (off)
  • Turn-on and turn-off delay time: 15ns/400ns
  • Package: TO-247AD (IXGH) case
  • Maximum power dissipation: 150W
  • Designed for: use in discrete semiconductor products
  • Status: now obsolete (EOL)
  • Operating temperature range: -55°C to 150°C (TJ)

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