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Same model may have multiple batches, images only for reference.
IXGH25N100U1 Real Image
Same model may have multiple batches, images only for reference.

IXGH25N100U1

Part No IXGH25N100U1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1000V 50A 200W TO247AD
Datasheet
IXGH25N100U1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 3.5V @ 15V, 25A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 5mJ (off)
Input Type Standard
Gate Charge 130nC
Turn-on and Turn-off delay time 100ns/500ns
Testing Conditions 800V, 25A, 33 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049588-IXGH25N100U1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH25N100U1 CAD Model

Description

The IXYS 1049588-IXGH25N100U1 is an obsolete IGBT transistor with a maximum collector-emitter breakdown voltage of 1000V and a maximum power dissipation of 200W.

  • Pulsed Collector Current: 100A
  • Collector-Emitter Saturation Voltage (Max): 3.5V @ 15V, 25A
  • Total Switching Energy (Ets): 5mJ (off)
  • Turn-On and Turn-Off Delay Time: 100ns/500ns
  • Testing Conditions: 800V, 25A, 33 Ohm, 15V
  • Base Product Number: DH60
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Sufficient

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