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Same model may have multiple batches, images only for reference.
IXGA16N60C2D1 Real Image
Same model may have multiple batches, images only for reference.

IXGA16N60C2D1

Part No IXGA16N60C2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 40A 150W TO263 / IGBT PT 600 V 40 A 150 W Surface Mount TO-263AA
Datasheet
IXGA16N60C2D1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series HiPerFAST™
Package Tube
Product Status Obsolete
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 12A
Power - Max 150 W
Switching Energy 160µJ (on), 90µJ (off)
Input Type Standard
Gate Charge 25 nC
Td (on/off) @ 25°C 16ns/75ns
Test Condition 400V, 12A, 22Ohm, 15V
Reverse Recovery Time (trr) 30 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA
Base Product Number IXGA16
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1189436-IXGA16N60C2D1
Ultra Librarian 3D Model Ultra Librarian IXGA16N60C2D1 CAD Model

Description

The IXGA16N60C2D1 is a single IGBT transistor from IXYS, designed for high power applications.

  • Type: PT IGBT
  • Collector-Emitter Breakdown Voltage (Max): 600V
  • Collector Current (Max): 40A
  • Switching Energy (On): 160μJ
  • Switching Energy (Off): 90μJ
  • Reverse Recovery Time: 30ns
  • Gate Charge: 25nC
  • td (on/off) @ 25°C: 16ns/75ns
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD (SMT)
  • Power (Max): 150W
  • Switching Voltage: 200VAC/200VDC

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