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Same model may have multiple batches, images only for reference.
IXFX55N50 Real Image
Same model may have multiple batches, images only for reference.

IXFX55N50

Part No IXFX55N50
Manufacturer IXYS
Catalog FETs - Single
Description HiPerRF Power MOSFETs | MOSFET N-CH 500V 55A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 55A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 80mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 330nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 9400pF at 25V
Power Dissipation (Maximum) 625W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
Win Source Part Number 1191156-IXFX55N50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX55N50 CAD Model

Description

The IXYS MOSFET is a N-channel transistor with a Vds of 500V and a continuous drain current of 55A.

  • Package: PLUS247-3
  • Mounting: through hole
  • Gate-source voltage(th): 4.5V @ 8mA
  • Gate charge: 330nC @ 10V
  • Input capacitance: 9400pF @ 25V
  • Rds On: 80mOhm @ 500mA and 10V
  • Compliance: compliant with halogen-free standards
  • Supply and demand status: limited
  • Suitability: suitable for use in discrete semiconductor products

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