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Same model may have multiple batches, images only for reference.
IXFX420N10T Real Image
Same model may have multiple batches, images only for reference.

IXFX420N10T

Part No IXFX420N10T
Manufacturer IXYS
Catalog FETs - Single
Description GigaMOS Trench HiperFET Power MOSFET | MOSFET N-CH 100V 420A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 420A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.6mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 670nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 47000pF at 25V
Power Dissipation (Maximum) 1670W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191153-IXFX420N10T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX420N10T CAD Model

Description

The IXFX420N10T is a MOSFET electronic component manufactured by IXYS.

  • Supply and Demand: Limited
  • Win Source Part Number: 1191153
  • Manufacturer Homepage: www.ixys.com
  • Power Dissipation: 1670W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 420A
  • Gate-Source Voltage: +/- 20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.7586 $71.2758
6+ $19.4943 $116.9658
8+ $18.8851 $151.0808
11+ $18.2759 $201.0349
15+ $17.6667 $265.0005
19+ $15.8391 $300.9429
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Availability: 23,000 pieces
MOQ: 3 pcs
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