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IXFX38N80Q2

Name: IXFX38N80Q2
Brand: IXYS
SKU: 608464
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFX38N80Q2
Manufacturer	IXYS
Catalog	FETs - Single
Description	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R \| MOSFET N-CH 800V 38A PLUS247
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	800V
Id - Continuous Drain Current	38A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	220mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id	4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	190nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	8340pF at 25V
Power Dissipation (Maximum)	735W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	PLUS247-3
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191152-IXFX38N80Q2
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFX38N80Q2 CAD Model

Alternative Products

Description

The IXYS IXFX38N80Q2 is a high power MOSFET designed for use in a variety of applications, including power supplies, motor control, and lighting.

Maximum Drain-Source Voltage: 800V
Continuous Drain Current: 38A
On-Resistance: 220mOhm @ 19A and 10V
Package: TO-247-3 package, which is through-hole mountable.
Series: part of the HiPerFET series of MOSFETs from IXYS, which are known for their high performance and reliability.
Choice: If you need a high power MOSFET for your next project, the IXYS IXFX38N80Q2 is an excellent choice.

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