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Same model may have multiple batches, images only for reference.
IXFX38N80Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFX38N80Q2

Part No IXFX38N80Q2
Manufacturer IXYS
Catalog FETs - Single
Description N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R | MOSFET N-CH 800V 38A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 38A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 190nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 8340pF at 25V
Power Dissipation (Maximum) 735W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191152-IXFX38N80Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX38N80Q2 CAD Model

Description

The IXYS IXFX38N80Q2 is a high power MOSFET designed for use in a variety of applications, including power supplies, motor control, and lighting.

  • Maximum Drain-Source Voltage: 800V
  • Continuous Drain Current: 38A
  • On-Resistance: 220mOhm @ 19A and 10V
  • Package: TO-247-3 package, which is through-hole mountable.
  • Series: part of the HiPerFET series of MOSFETs from IXYS, which are known for their high performance and reliability.
  • Choice: If you need a high power MOSFET for your next project, the IXYS IXFX38N80Q2 is an excellent choice.

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