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IXFX32N50

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Part No	IXFX32N50
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET Power MOSFET \| MOSFET N-CH 500V 32A PLUS247
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	32A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	150mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs	300nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	5450pF at 25V
Power Dissipation (Maximum)	360W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	PLUS247-3
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191150-IXFX32N50
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFX32N50 CAD Model

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Description

The IXYS MOSFET is a high-quality electronic component that is designed to provide reliable and efficient performance.

Transistor Polarity: N-Channel
Drive Voltage: 10V
Package: TO-247-3
Power Dissipation: 360W
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current: 32A
Maximum Rds On: 150mOhm @ 15A and 10V
Gate-Source Voltage: ±20V
Input Capacitance: 5450pF @ 25V
Status: Obsolete
Supply and Demand Status: Limited

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