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Same model may have multiple batches, images only for reference.
IXFX32N50 Real Image
Same model may have multiple batches, images only for reference.

IXFX32N50

Part No IXFX32N50
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFET | MOSFET N-CH 500V 32A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 150mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 300nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5450pF at 25V
Power Dissipation (Maximum) 360W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191150-IXFX32N50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX32N50 CAD Model

Description

The IXYS MOSFET is a high-quality electronic component that is designed to provide reliable and efficient performance.

  • Transistor Polarity: N-Channel
  • Drive Voltage: 10V
  • Package: TO-247-3
  • Power Dissipation: 360W
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 32A
  • Maximum Rds On: 150mOhm @ 15A and 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 5450pF @ 25V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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