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Same model may have multiple batches, images only for reference.
IXFN44N50U2 Real Image
Same model may have multiple batches, images only for reference.

IXFN44N50U2

Part No IXFN44N50U2
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs | MOSFET N-CH 500V 44A SOT-227B
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 44A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 120mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 270nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 8400pF at 25V
Power Dissipation (Maximum) 520W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Chassis Mount
Supplier Device Package SOT-227B
Manufacturer Package SOT-227-4, miniBLOC
Manufacturer Pack Quantity 10
MSL Level 1 (Unlimited)
Win Source Part Number 1191118-IXFN44N50U2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFN44N50U2 CAD Model

Description

The IXFN44N50U2 is a MOSFET featuring an N-channel transistor polarity by IXYS.

  • Designed for: Use in discrete semiconductor products
  • Drive Voltage: 10V
  • Maximum Power Dissipation: 520W
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 44A
  • Maximum On-State Resistance: 120mOhm @ 500mA and 10V
  • Gate-Source Voltage Threshold: 4V @ 8mA
  • Gate Charge: 270nC @ 10V
  • Package: SOT-227B package
  • Mounting: Chassis
  • Operating Temperature Range: -40°C to 150°C
  • Status: Obsolete

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