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IXFK180N10

Part No IXFK180N10
Manufacturer IXYS
Catalog FETs - Single
Description Single MOSFET Die | MOSFET N-CH 100V 180A TO-264AA
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 180A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8mOhm at 90A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 390nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 10900pF at 25V
Power Dissipation (Maximum) 560W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level Not Applicable
Win Source Part Number 1191083-IXFK180N10
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK180N10 CAD Model

Description

IXYS introduces a MOSFET technology-based semiconductor product, the 1191083-IXFK180N10.

  • Transistor Polarity: N-Channel
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Maximum Power Dissipation: 560W
  • Vds-Drain-Source Breakdown Voltage: 100V
  • Gate-Source Voltage(th) (Maximum) @ Id: 4V @ 8mA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 10900pF @ 25V
  • Packaging: Tube
  • Manufacturer Package: TO-264-3, TO-264AA

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $25.6120 $51.2240
5+ $21.0150 $105.0750
8+ $20.3583 $162.8664
11+ $19.7015 $216.7165
14+ $19.0448 $266.6272
18+ $17.0747 $307.3446
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 390 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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