The IXFK150N15 is a MOSFET transistor designed for use in discrete semiconductor products.

• Drain-Source Breakdown Voltage: It has a drain-source breakdown voltage of 150V.
• Continuous Drain Current: It has a continuous drain current of 150A.
• Power Dissipation: The maximum power dissipation is 560W.
• Package: It comes in a TO-264-3 or TO-264AA package.
• Gate-Source Voltage: The gate-source voltage is ±20V.
• Input Capacitance: The input capacitance is 9100pF @ 25V.
• Drive Voltage: The drive voltage (max Rds on, min Rds on) is 10V.
• Temperature Range: The temperature range for operation is -55°C to 150°C.
• Gate-Source Voltage(th) (Maximum) @ Id: 4V @ 8mA.
• Gate Charge (Qg) (Maximum) @ Vgs: 360nC @ 10V.
• Rds On (Maximum) @ Id, Vgs: 12.5mOhm @ 75A, 10V.
• Supply: The IXFK150N15 is supplied in a tube and has a mounting style of through hole.