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IXBT16N170A

Part No IXBT16N170A
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1700V 16A 150W TO268 / Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(2+Tab) TO-268
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series BIMOSFET
Packaging Bulk
Voltage - Collector Emitter Breakdown (Maximum) 1700V
Current - Collector (Ic) (Maximum) 16A
Current - Collector Pulsed (Icm) 40A
Vce(on) (Maximum) @ Vge, Ic 6V @ 15V, 10A
Power - Max 150W
Switching Energy 1.2mJ (off)
Input Type Standard
Gate Charge 65nC
Td (on/off) @ 25°C 15ns/160ns
Test Condition 1360V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) 360ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Package TO-268
Win Source Part Number 777601-IXBT16N170A
Popularity Medium
Supply and Demand Status Limited
Family Name IXBT 16N170A
Introduction Date October 21, 2000
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IXBT16N170A CAD Model

Description

The IXYS BIMOSFET series presents the IXBT 16N170A, a high power MOSFET.

  • Maximum Power: 150W
  • Current Collector (Ic): 16A
  • Voltage Collector Emitter Breakdown (Vce): 1700V
  • Operating Temperature Range: -55°C to 150°C
  • Reverse Recovery Time (trr): 360ns
  • Switching Energy: 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 15ns/160ns
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.9098 $62.7294
6+ $17.1568 $102.9408
10+ $16.6206 $166.2060
13+ $16.0845 $209.0985
17+ $15.5483 $264.3211
22+ $13.9399 $306.6778
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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