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Same model may have multiple batches, images only for reference.
IXBH40N160 Real Image
Same model may have multiple batches, images only for reference.

IXBH40N160

Part No IXBH40N160
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1600V 33A 350W TO247AD
Datasheet
IXBH40N160 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1600V
Maximum Current Collector 33A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 7.1V @ 15V, 20A
Maximum Power Dissipation 350W
Input Type Standard
Gate Charge 130nC
Testing Conditions 960V, 20A, 22 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXBH)
Win Source Part Number 1049254-IXBH40N160
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXBH40N160 CAD Model

Description

The IXBH40N160 is a through-hole mounting Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS.

  • Maximum Current Collector: 33A
  • Maximum Collector-Emitter Breakdown Voltage: 1600V
  • IGBT Type: Not specified
  • Input Type: Standard
  • Gate Charge: 130nC
  • Collector-Emitter Saturation Voltage: 7.1V @ 15V, 20A
  • Maximum Power Dissipation: 350W
  • Pulsed Collector Current: 40A
  • Total Switching Energy: Not specified
  • Turn-On and Turn-Off Delay Time: Not specified
  • Suitable for Use: Discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C

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7+ $25.7366 $180.1562
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17+ $21.5855 $366.9535
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