IXBH2N250 Real Image
Same model may have multiple batches, images only for reference.

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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series BIMOSFET™
Package Tube
Voltage - Collector Emitter Breakdown (Max) 2500 V
Current - Collector (Ic) (Max) 5 A
Current - Collector Pulsed (Icm) 13 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Power - Max 32 W
Input Type Standard
Gate Charge 10.6 nC
Reverse Recovery Time (trr) 920 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXBH2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1193176-IXBH2N250
Ultra Librarian 3D Model Ultra Librarian IXBH2N250 CAD Model

Description

The IXBH2N250 is a BIMOSFET N-channel transistor with a breakdown voltage of 2500 V and a maximum power of 32 W.

  • Breakdown Voltage: 2500 V
  • Maximum Power: 32 W
  • Package: TO-247-3
  • Mounting: Through holes
  • Maximum Collector Current: 5 A
  • Maximum Collector Pulsed Current: 13 A
  • Maximum On-State Voltage: 3.5V @ 15V and 2A
  • Gate Charge: 10.6 nC
  • Gate-Source Voltage: 10V
  • Reverse Recovery Time: 920 ns
  • REACH: Unaffected
  • Operating Temperature Range: -55°C to 150°C
  • ECCN: EAR99
  • Package: Tube
  • Standard Package: 30 units
  • Ideal for: High voltage applications where low on-state resistance and high breakdown voltage are required

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.2736 $53.0944
10+ $10.8911 $108.9110
15+ $10.5508 $158.2620
20+ $10.2104 $204.2080
26+ $9.8701 $256.6226
34+ $8.8491 $300.8694
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 3,930 pieces
MOQ: 4 pcs
Order Increment : 1 piece
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