The IXBH2N250 is a BIMOSFET N-channel transistor with a breakdown voltage of 2500 V and a maximum power of 32 W.

• Breakdown Voltage: 2500 V
• Maximum Power: 32 W
• Package: TO-247-3
• Mounting: Through holes
• Maximum Collector Current: 5 A
• Maximum Collector Pulsed Current: 13 A
• Maximum On-State Voltage: 3.5V @ 15V and 2A
• Gate Charge: 10.6 nC
• Gate-Source Voltage: 10V
• Reverse Recovery Time: 920 ns
• REACH: Unaffected
• Operating Temperature Range: -55°C to 150°C
• ECCN: EAR99
• Package: Tube
• Standard Package: 30 units
• Ideal for: High voltage applications where low on-state resistance and high breakdown voltage are required