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FGH40N60SMDF

Part No FGH40N60SMDF
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / 600V, 40A Field Stop IGBT | IGBT 600V 80A 349W TO247
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 40A
Maximum Power 349W
Switching Energy 1.3mJ (on), 260μJ (off)
Input Type Standard
Gate Charge 119nC
Td (on/off) at 25°C 12ns/92ns
Test Condition 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Family Part Number FGH40N60
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Win Source Part Number 1174186-FGH40N60SMDF
Manufacturer Homepage www.fairchildsemi.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name FGH40N60SMDF
Introduction Date May 01, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian FGH40N60SMDF CAD Model

Description

ON Semiconductor FGH40N60SMDF IGBT

The FGH40N60SMDF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) product from ON Semiconductor, designed to deliver high-efficiency and high-speed switching performance for a wide range of power applications. This device is particularly suitable for applications requiring low conduction and switching losses, such as motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems.

Key Features:

  • High Current Capability: The FGH40N60SMDF is capable of handling continuous currents up to 40A, and pulsed currents significantly higher, making it suitable for high-power applications.
  • Low Saturation Voltage: With a typical collector-emitter saturation voltage of 1.8V, this IGBT ensures low conduction losses, enhancing overall system efficiency.
  • Fast Switching Speed: The device offers fast switching characteristics, with a typical fall time of 90ns, which is beneficial for reducing switching losses and improving performance in high-frequency applications.
  • High Input Impedance: The high input impedance characteristic of the IGBT technology makes it easy to drive and control, simplifying the design of the driving circuitry.
  • Co-Packaged Free Wheeling Diode: The FGH40N60SMDF includes an integrated fast-recovery diode with low forward voltage, which provides protection against reverse current and reduces the need for external components.

Robust Design:

This IGBT is built with ON Semiconductor's proprietary field stop trench technology, which provides robust performance even under extreme conditions. Its maximum junction temperature of 150°C allows for reliable operation at elevated temperatures, and its short-circuit withstand time of 10μs offers additional protection against abnormal operating conditions.

Package and Compliance:

The FGH40N60SMDF comes in a TO-247 package, which is known for excellent thermal performance and is widely used in high-power applications. The device is compliant with RoHS regulations, ensuring that it meets global environmental standards and is free from hazardous substances.

Applications:

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Induction Heating
  • High-Frequency Converters

With its optimal balance of speed, efficiency, and reliability, the FGH40N60SMDF from ON Semiconductor is an excellent choice for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.7687 $75.0748
8+ $15.4000 $123.2000
12+ $14.9187 $179.0244
16+ $14.4375 $231.0000
21+ $13.9563 $293.0823
28+ $12.5125 $350.3500
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Availability: 4,500 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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