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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series BIMOSFET™
Package Tube
Voltage - Collector Emitter Breakdown (Max) 3000 V
Current - Collector (Ic) (Max) 86 A
Current - Collector Pulsed (Icm) 600 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 55A
Power - Max 357 W
Input Type Standard
Gate Charge 335 nC
Reverse Recovery Time (trr) 1.9 µs
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case i4-Pac™-5 (3 Leads)
Supplier Device Package ISOPLUS i4-PAC™
ECCN EAR99
HTSUS 8541.29.0095
Other Names 238-IXBF55N300
Standard Package 25
Win Source Part Number 1005543-IXBF55N300
Ultra Librarian 3D Model Ultra Librarian IXBF55N300 CAD Model

Description

The IXYS BIMOSFET™ IXBF55N300 is an IGBT transistor with a maximum power rating of 357W and a collector-emitter breakdown voltage of 3000V.

  • Maximum Collector Current: 86A
  • Maximum Collector Pulsed Current: 600A
  • Gate Charge: 335nC @ 15V
  • On-State Voltage Drop: 3.2V @ 55A
  • Packaging: i4-Pac™-5 (3 Leads)
  • Mounting: through-hole
  • Operating Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
1+ $108.2182 $108.2182
2+ $104.7273 $209.4546
3+ $101.2364 $303.7092
4+ $90.7637 $363.0548
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