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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 85mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2970pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1187771-IRFP250
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial, Portable Devices, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian IRFP250 CAD Model

Description

IXYS MOSFET transistor with N-Channel polarity is a high-performance device used in power management, industrial, portable devices, and consumer electronics.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 30A
  • Maximum Power Dissipation: 190W
  • Mounting Style: through-hole
  • Supplier Device Package: TO-247AD
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 2970pF @ 25V
  • Gate Charge: 140nC @ 10V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Status: obsolete
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7038 $52.7850
175+ $0.5775 $101.0625
270+ $0.5594 $151.0380
370+ $0.5414 $200.3180
480+ $0.5234 $251.2320
640+ $0.4692 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 68,800 pieces
MOQ: 75 pcs
Order Increment : 1 Stück
*Need More Quantity? *Request a Bulk Quantity Quotation?

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