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RFP2N12L

Part No RFP2N12L
Manufacturer Intersil
Catalog OEM Parts (O - R)
Description Power Field-effect Transistor, 2A I(d), 120V, 1.75 Ohm, 1-ELEMENT, N-channel, Silicon, Metal-oxide Semiconductor Fet,...
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RoHS Non-Compliant
Win Source Part Number 965468-RFP2N12L
Categories OEM Parts(O-R)
Manufacturer Intersil
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RFP2N12L CAD Model

Description

The RFP2N12L is an N-Channel enhancement mode logic level power MOSFET from Intersil. This device is designed for applications requiring fast switching and low on-resistance. Its logic-level gate drive makes it suitable for direct interfacing with logic circuits and microcontrollers, simplifying circuit design and reducing component count.

Applications

  • DC-DC converters
  • Motor control
  • Solid-state relays
  • Power management in portable devices
  • Logic-level controlled circuits

Features

  • Logic-Level Gate Drive: Allows direct interfacing with logic circuits and microcontrollers.
  • Fast Switching Speed: Minimizes switching losses, improving efficiency in high-frequency applications.
  • Low On-Resistance (RDS(on)): Reduces conduction losses and improves overall efficiency.
  • High Input Impedance: Simplifies gate drive requirements.
  • Avalanche Energy Specified: Ensures ruggedness and reliability in demanding applications.

Benefits

  • Simplified Circuit Design: Logic-level gate drive reduces the need for additional gate drive circuitry.
  • Improved Efficiency: Low on-resistance and fast switching speed minimize power losses.
  • Enhanced Reliability: Avalanche energy specification ensures robust performance under transient conditions.
  • Reduced Component Count: Direct logic-level interfacing reduces the number of components needed.
  • Optimal Thermal Performance: Designed to efficiently dissipate heat, enhancing reliability in high-power applications.

Additional Details

The RFP2N12L is available in a through-hole package. Its key electrical characteristics include a drain-source voltage (VDS) of 120V, a continuous drain current (ID) of 2A, and a typical on-resistance (RDS(on)) of 2.5 Ohms at a gate-source voltage (VGS) of 5V. The gate threshold voltage is typically between 1V and 2V, ensuring compatibility with various logic levels. It is designed to operate over a wide temperature range, typically from -55°C to +150°C.

This MOSFET is commonly used in applications where a logic-level drive is required to control power. Its fast switching speed and low on-resistance make it an excellent choice for high-efficiency DC-DC converters and motor control circuits.

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