The CDM6264E3 is a high-performance 64K (8K x 8) CMOS static RAM (SRAM) manufactured by Intersil Corporation. This SRAM offers fast access times, low power consumption, and high reliability, making it suitable for a variety of memory applications.

Applications

• Cache memory
• Buffer memory
• Embedded systems
• Microprocessor systems
• Data acquisition systems

Features

• Fast access time: Down to 10ns
• Low power consumption: Typically 50mA active, 10μA standby
• Single 5V power supply operation
• Fully static operation: No clock or refresh required
• Equal access and cycle times
• Common data input and output
• Three-state outputs
• Available in various packages, including DIP and SOIC

Benefits

• Fast access times enable high-speed data processing.
• Low power consumption extends battery life in portable devices.
• Static operation simplifies system design and eliminates the need for refresh circuitry.
• Wide operating temperature range ensures reliable operation in diverse environments.
• Multiple package options provide flexibility in board layout and design.

Additional Details

The CDM6264E3 is available in different speed grades, with access times ranging from 10ns to 25ns. It features an operating temperature range of -40°C to +85°C, making it suitable for industrial applications. The device is TTL-compatible and offers high noise immunity. The three-state outputs allow for easy connection to a system bus. It's crucial to adhere to proper ESD handling precautions when working with this component to prevent damage.

The CDM6264E3's key specifications include a supply voltage of 5V ± 10%, input high voltage (VIH) of 2.2V (min), and input low voltage (VIL) of 0.8V (max). The output high voltage (VOH) is 2.4V (min) and the output low voltage (VOL) is 0.4V (max).