The IRLR3715ZCTRRPBF is a 20V single N-channel HEXFET power MOSFET from International Rectifier (now Infineon Technologies). It is designed for a wide range of power switching applications. This MOSFET offers a low on-resistance, which contributes to reduced power losses and improved efficiency in circuit designs.

Applications

• Synchronous rectification in DC-DC converters
• Power management in portable devices
• Motor control applications
• Load switching
• Battery management systems

Features

• Advanced Trench Technology: Provides low on-resistance and gate charge
• Ultra Low On-Resistance: Minimizes conduction losses
• Logic-Level Gate Drive: Allows direct drive from logic circuits
• Dynamic dv/dt Rating: Ensures reliable operation under high switching conditions
• 100% Avalanche Tested: Guarantees robustness and reliability
• Lead-Free: Compliant with environmental regulations

Benefits

• Increased efficiency: Reduces power dissipation and heat generation
• Simplified design: Logic-level gate drive simplifies interfacing with control circuits
• Enhanced system reliability: Robust design ensures stable operation in demanding applications
• Compact design: Allows for smaller and lighter power supply designs
• Improved thermal performance: Reduces the need for external heat sinks

Additional Details

The IRLR3715ZCTRRPBF has a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 42A at 25°C. Its typical on-resistance (Rds(on)) is 4.8 mΩ at Vgs = 4.5V. The device is available in a D-PAK (TO-252) package, which is suitable for surface mounting and offers good thermal performance. The gate threshold voltage is typically between 1V and 2.5V. The fast switching speed and low gate charge contribute to high-frequency operation with minimal switching losses. This MOSFET is well-suited for applications where efficiency, size, and reliability are critical design considerations.