The IS67WVE416BLL-70BLAI is a high-performance, low-power Pseudo SRAM (PSRAM) from Integrated Silicon Solution, Inc. (ISSI). It's organized as 256K x 16 bits, providing a memory capacity of 4 Mbit. This PSRAM is designed for applications requiring a combination of SRAM-like performance with DRAM-like density. It offers a typical access time of 70ns and operates at a low voltage.
Applications
- Mobile phones: Main memory in feature phones and smartphones.
- Handheld devices: PDAs, portable media players, and e-readers.
- Wearable devices: Smartwatches, fitness trackers, and other wearable electronics.
- Embedded systems: Industrial controllers, point-of-sale terminals, and medical devices.
- Automotive applications: Infotainment systems and telematics.
Features
- SRAM-like performance: Fast access times comparable to SRAM.
- DRAM-like density: High memory capacity in a small package.
- Low power consumption: Ideal for battery-powered applications.
- Self-refresh: Automatic refresh mechanism eliminates the need for external refresh circuitry.
- JEDEC standard interface: Compatible with industry-standard memory controllers.
- Available in various package options: BGA and others.
- 70ns Access Time: Fast memory access to speed up device processes.
Benefits
- High performance: Provides fast data access for responsive user experiences.
- Small form factor: Enables compact device designs.
- Long battery life: Minimizes power consumption for extended operation.
- Simplified design: Self-refresh feature reduces design complexity.
- Easy integration: Standard interface simplifies integration with existing systems.
Additional Details
The IS67WVE416BLL-70BLAI operates from a single power supply voltage. The self-refresh feature ensures data retention without external intervention, simplifying the memory controller design. The JEDEC standard interface allows for seamless integration with a wide range of processors and chipsets. The PSRAM is available in lead-free and RoHS-compliant packages, ensuring environmental compliance. It also features a low standby current, further minimizing power consumption when the device is not actively being used. The industrial temperature range makes it suitable for use in harsh environments. The PSRAM integrates both a SRAM array as well as DRAM refresh.