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Same model may have multiple batches, images only for reference.
SPS02N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPS02N60C3

Part No SPS02N60C3
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Cool MOS™ Power Transistor | MOSFET N-CH 650V 1.8A TO251-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 1.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 80μA
Gate Charge (Qg) (Maximum) at Vgs 12.5nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 200pF at 25V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO251-3
Manufacturer Package TO-251-3 Stub Leads, IPak
Manufacturer Pack Quantity 1,500
MSL Level 1 (Unlimited)
Win Source Part Number 1258153-SPS02N60C3
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPS02N60C3 CAD Model

Description

The Infineon Technologies SPS02N60C3 is an N-channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 1.8A.

  • Rds On (Maximum): 3Ohm @ 1.1A, 10V
  • Package: TO-251-3 stub leads, IPak package
  • Mounting Style: through-hole
  • Operating Temperature Range: -55°C to 150°C
  • Application: widely used in power supplies, motor control, and other high voltage applications
  • Package: tube package
  • Manufacturer Pack Quantity: 1,500

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