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SPP11N60C2

Part No SPP11N60C2
Manufacturer Infineon Technologies
Catalog Electronic Wholesale
Description Cool MOS™ Power Transistor
Sample
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ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1258058-SPP11N60C2
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP11N60C2 CAD Model

Description

The SPP11N60C2 is a CoolMOS™ power MOSFET from Infineon Technologies. It's designed for high-voltage, high-efficiency switched-mode power supplies (SMPS) and other power electronics applications. This N-channel MOSFET utilizes a superjunction technology, which significantly reduces on-resistance (RDS(on)) and gate charge (Qg), leading to improved efficiency and reduced switching losses.

Applications

  • Switched-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
  • Lighting applications (e.g., LED drivers)
  • Motor control

Features

  • CoolMOS™ C2 Technology: Provides ultra-low on-resistance and gate charge.
  • High Blocking Capability: 600V drain-source voltage (VDS).
  • Low RDS(on): Reduces conduction losses.
  • Low Gate Charge (Qg): Minimizes switching losses.
  • Avalanche Rated: Robust performance under avalanche conditions.
  • Pb-free lead plating; RoHS compliant: Environmentally friendly.

Benefits

  • Increased Efficiency: Lower RDS(on) and Qg translate to higher efficiency in power conversion applications.
  • Reduced Switching Losses: Fast switching speeds due to low gate charge minimize losses during switching transitions.
  • Improved Thermal Performance: Lower power dissipation leads to lower operating temperatures and improved reliability.
  • Simplified Design: High blocking voltage simplifies circuit design.
  • Enhanced Reliability: Avalanche rating ensures robustness in demanding applications.

The SPP11N60C2 is designed for ease of use and optimal performance. Its low on-resistance minimizes conduction losses, while its low gate charge reduces switching losses, resulting in a highly efficient and reliable power MOSFET. The avalanche rating ensures that the device can withstand transient voltage spikes, making it suitable for demanding applications. This MOSFET comes in a TO-220 package, facilitating easy mounting and heat sinking.

Technical Specifications:

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 11A
  • On-Resistance (RDS(on)): 0.29 Ohm (typical)
  • Gate Charge (Qg): 25 nC (typical)
  • Package: TO-220

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