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SPB11N60C3ATMA1 Real Image1 SPB11N60C3ATMA1 Real Image2
Same model may have multiple batches, images only for reference.
SPB11N60C3ATMA1 Real Image1 SPB11N60C3ATMA1 Real Image2
SPB11N60C3ATMA1 Real Image1 SPB11N60C3ATMA1 Real Image2
Same model may have multiple batches, images only for reference.

SPB11N60C3ATMA1

Part No SPB11N60C3ATMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 650V 11A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 380mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 500μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PG-TO263-3-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 734629-SPB11N60C3ATMA1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB11N60C3ATMA1 CAD Model

Description

The Infineon Technologies SPB11N60C3ATMA1 is an N-Channel MOSFET transistor that can handle a maximum voltage of 650V and a continuous drain current of 11A.

  • Maximum Rds On: 380mOhm @ 7A and 10V
  • Gate-Source Voltage Threshold: 3.9V @ 500μA
  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 125W
  • Input Capacitance: 1200pF @ 25V
  • Gate Charge: 60nC @ 10V
  • Temperature Range: -55°C to 150°C
  • Supply: Limited quantities
  • Popularity: Low

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