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Same model may have multiple batches, images only for reference.
SKB02N120ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SKB02N120ATMA1

Part No SKB02N120ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 6.2A 62W TO263-3-2
Datasheet
SKB02N120ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 6.2A
Pulsed Collector Current 9.6A
Collector-emitter saturation voltage(Max) 3.6V @ 15V, 2A
Maximum Power Dissipation 62W
Total Switching Energy(Ets) 220μJ
Input Type Standard
Gate Charge 11nC
Turn-on and Turn-off delay time 23ns/260ns
Testing Conditions 800V, 2A, 91 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Win Source Part Number 1096691-SKB02N120ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SKB02N120ATMA1 CAD Model

Description

The Infineon Technologies IGBT is a NPT type IGBT with a maximum power dissipation of 62W.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 6.2A
  • Gate Charge: 11nC
  • Reverse Recovery Time (trr): 50ns
  • Collector-Emitter Saturation Voltage(Max): 3.6V @ 15V, 2A
  • Turn-On and Turn-Off Delay Time: 23ns/260ns
  • Package: PG-TO263-3-2
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Product
  • Status: Active

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