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Same model may have multiple batches, images only for reference.
SIGC76T65R3EX1SA1 Real Image
Same model may have multiple batches, images only for reference.

SIGC76T65R3EX1SA1

Part No SIGC76T65R3EX1SA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC76T65R3EX1SA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™
Package Bulk
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 150 A
Current - Collector Pulsed (Icm) 450 A
Vce(on) (Max) @ Vge, Ic 1.2V @ 15V, 45A
Input Type Standard
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Base Product Number SIGC76
Other Names SP000685884,448-SIGC76T65R3EX1SA1
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
HTSUS 0000.00.0000
Win Source Part Number 1277413-SIGC76T65R3EX1SA1
Ultra Librarian 3D Model Ultra Librarian SIGC76T65R3EX1SA1 CAD Model

Description

The Infineon Technologies TrenchStop™ IGBT transistor is a high-performance component that can handle a voltage breakdown of up to 650V.

  • Voltage Breakdown: 650V
  • Maximum Collector Current: 150A
  • Pulsed Collector Current: 450A
  • Gate-Source Voltage: 15V
  • Power Dissipation: 139W
  • Temperature Range: -40°C to 175°C
  • Package: Bulk
  • Standard Package: 1

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