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Same model may have multiple batches, images only for reference.
SGW30N60FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SGW30N60FKSA1

Part No SGW30N60FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 41A 250W TO247-3
Datasheet
SGW30N60FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 41A
Pulsed Collector Current 112A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 1.29mJ
Input Type Standard
Gate Charge 140nC
Turn-on and Turn-off delay time 44ns/291ns
Testing Conditions 400V, 30A, 11 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 108214-SGW30N60FKSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 240
Ultra Librarian 3D Model Ultra Librarian SGW30N60FKSA1 CAD Model

Description

The Infineon Technologies SGW30N60FKSA1 is a medium-popularity discrete semiconductor product that is currently not for new designs.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 108214-SGW30N60FKSA1
  • Type: NPT-type IGBT
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 250W
  • Gate Charge: 140nC
  • Mounting: through-hole technology

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