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Same model may have multiple batches, images only for reference.
SGB30N60ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SGB30N60ATMA1

Part No SGB30N60ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 41A 250W TO263-3
Datasheet
SGB30N60ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 41A
Pulsed Collector Current 112A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 1.29mJ
Input Type Standard
Gate Charge 140nC
Turn-on and Turn-off delay time 44ns/291ns
Testing Conditions 400V, 30A, 11 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Win Source Part Number 1095579-SGB30N60ATMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian SGB30N60ATMA1 CAD Model

Description

The Infineon Technologies 1095579-SGB30N60ATMA1 is a high-performance IGBT transistor designed for use in a wide range of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 41A
  • IGBT Type: NPT
  • Input Type: Standard
  • Gate Charge: 140nC
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V and 30A
  • Total Switching Energy: 1.29mJ
  • Turn-On Delay Time: 44ns
  • Turn-Off Delay Time: 291ns
  • Package: PG-TO263-3
  • Packaging: Reel - TR
  • Market Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Package Quantity: 1k pcs

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