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SGB15N120

Name: SGB15N120
Brand: Infineon Technologies
SKU: 320002
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	SGB15N120
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 1200V 30A 198W TO263-3
Datasheet	SGB15N120 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
IGBT Type	NPT
VCEO Maximum Collector-Emitter Breakdown Voltage	1200V
Maximum Current Collector	30A
Pulsed Collector Current	52A
Collector-emitter saturation voltage(Max)	3.6V @ 15V, 15A
Maximum Power Dissipation	198W
Total Switching Energy(Ets)	1.9mJ
Input Type	Standard
Gate Charge	130nC
Turn-on and Turn-off delay time	18ns/580ns
Testing Conditions	800V, 15A, 33 Ohm, 15V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO263-3
Win Source Part Number	211593-SGB15N120
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SGB15N120 CAD Model

Description

The Infineon Technologies SGB15N120 is a medium-popularity discrete semiconductor product that is currently in balance supply and demand.

Manufacturer: Infineon Technologies
Win Source Part Number: 211593-SGB15N120
IGBT Type: NPT
Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 198W
Gate Charge: 130nC
Mounted Through: SMD (SMT) technology

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$4.8556	$58.2672
29+	$3.9848	$115.5592
45+	$3.8600	$173.7000
62+	$3.7353	$231.5886
80+	$3.6105	$288.8400
108+	$3.2375	$349.6500

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,600 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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