The PTFA180801FA is an RF power LDMOS transistor from Infineon Technologies. It is designed for high-power amplifier applications in the 1800 MHz frequency range. This transistor is engineered for robust performance and high efficiency, making it suitable for demanding wireless infrastructure applications.

Applications

• Base station power amplifiers
• Wireless infrastructure
• Industrial, Scientific, and Medical (ISM) applications
• Cellular infrastructure

Features

• High power gain
• High efficiency
• Internally matched for ease of use
• Excellent ruggedness
• Designed for broadband operation

Benefits

• Reduced amplifier size and cost due to high power gain
• Lower operating costs due to high efficiency
• Simplified amplifier design due to internal matching
• Improved amplifier reliability due to excellent ruggedness
• Increased design flexibility due to broadband operation

Detailed Specs

The PTFA180801FA typically operates at 28 V and delivers 80 W of output power. It features a gain of around 19 dB and an efficiency of approximately 55%. The device is housed in a ceramic package optimized for thermal performance and reliability. It is designed to withstand high VSWR (Voltage Standing Wave Ratio) conditions, ensuring robust operation in challenging environments. The transistor's broadband capability allows it to be used in various frequency bands within its specified range, providing flexibility in amplifier design. Infineon's advanced LDMOS technology ensures consistent performance and long-term reliability. This part is commonly used in the final stage of base station amplifiers for mobile communication.