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IRS2118SPBF

Part No IRS2118SPBF
Manufacturer Infineon Technologies
Catalog PMIC - Gate Drivers
Description SINGLE CHANNEL DRIVER | IC DRIVER MOSFET/IGBT 1CH 8-SOIC
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Categories Integrated Circuits
Manufacturer Infineon Technologies
Packaging Tube
Driven Configuration High-Side
Channel Type Single
Number of Drivers 1
Gate Type IGBT, N-Channel MOSFET
Supply Voltage (V) 10V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time 75ns, 35ns
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SOIC
Family Part Number IRS2118SPBF
Manufacturer Pack Quantity 3,800
MSL Level 2 (1 Year)
Win Source Part Number 1188755-IRS2118SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRS2118SPBF CAD Model

Description

The IRS2118SPBF is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies. It's designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. This driver features a floating high-side driver specifically designed for bootstrap operation, simplifying the gate drive circuitry in many power conversion applications. It is known for its robust design and reliable performance in demanding environments.

Applications:

  • Motor drives
  • Half-bridge and full-bridge converters
  • Induction heating
  • Power supplies
  • Lighting ballast

Features:

  • Floating channel designed for bootstrap operation: Allows driving high-side MOSFETs with simple circuitry.
  • High-side gate drive up to 600V: Supports a wide range of applications.
  • Matched propagation delay for both channels: Ensures efficient and reliable operation.
  • Under-voltage lockout (UVLO): Prevents MOSFETs from operating at insufficient gate voltage.
  • CMOS Schmitt-triggered inputs with pull-down: Improve noise immunity and interface easily with control logic.
  • High-side output in phase with input: Simplifies control scheme.

Benefits:

  • Simplified Design: Integrated features reduce the need for external components.
  • Increased Efficiency: Optimized gate drive minimizes switching losses.
  • Improved Reliability: Built-in protection features enhance system robustness.
  • Flexible Application: Suitable for a wide range of power conversion topologies.
  • Robust Performance: Designed for harsh electrical environments.

Additional Details:

The IRS2118SPBF requires a bootstrap capacitor for the high-side drive. The value of this capacitor is crucial for proper operation and should be chosen based on the application's switching frequency and load requirements. The device also includes undervoltage lockout protection for both the high-side and low-side drivers, which prevents the MOSFETs or IGBTs from operating in a linear region where they could overheat. The inputs are compatible with standard CMOS or LSTTL logic levels. The package is typically an SOIC, which is suitable for surface mounting. Detailed specifications can be found in the Infineon datasheet for this part number, including parameters such as propagation delay, rise and fall times, and maximum operating frequency. Proper PCB layout is critical for minimizing noise and ensuring optimal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5102 $60.4080
95+ $1.2392 $117.7240
145+ $1.2004 $174.0580
200+ $1.1617 $232.3400
260+ $1.1230 $291.9800
345+ $1.0069 $347.3805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,970 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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