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IRS2110-1PBF

Part No IRS2110-1PBF
Manufacturer Infineon Technologies
Catalog OEM Parts (F - I)
Description High And Low Side Driver, All High Voltage Pins on One Side, Separate Logic And
Sample
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Number of Pins 14
Output Voltage 20 V
RoHS Compliant
Win Source Part Number 1065660-IRS2110-1PBF
Categories OEM Parts(F-I)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRS2110-1PBF CAD Model

Description

The IRS2110-1PBF is a high voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies. It's designed to drive N-channel MOSFETs and IGBTs in half-bridge configurations. This driver features independent high and low side referenced output channels, making it suitable for a wide range of power conversion applications.

Applications:

  • Half-bridge and full-bridge converters: Used in DC-DC converters, inverters, and motor drives.
  • Motor drives: Employed in motor control systems to drive power MOSFETs or IGBTs for efficient motor operation.
  • Power supplies: Used in power supplies for driving the switching transistors.
  • Audio amplifiers: Found in high-power audio amplifiers to drive output MOSFETs.
  • Induction heating: Used in induction heating systems to drive the high-frequency power transistors.

Features:

  • Floating channel designed for bootstrap operation: Allows for driving high-side N-channel MOSFETs or IGBTs.
  • Gate drive supply range from 10V to 20V: Provides flexibility in power supply design.
  • Logic input compatible with 3.3V and 5V logic: Simplifies interfacing with microcontrollers and other digital circuits.
  • Under-voltage lockout (UVLO): Prevents the driver from operating when the supply voltage is too low.
  • Matched propagation delay for both channels: Ensures accurate switching performance.

Benefits:

  • Simplified high-side drive: Bootstrap operation simplifies the high-side gate drive circuit.
  • Wide operating voltage range: Provides flexibility in power supply design.
  • Easy interface: Logic-level inputs simplify interfacing with digital circuits.
  • Enhanced protection: Under-voltage lockout protects the driven devices from damage.
  • Precise switching: Matched propagation delay ensures accurate switching performance.

Additional Details:

The IRS2110-1PBF has a maximum voltage rating of 500V and can drive MOSFETs or IGBTs with a peak current of up to 2A. It features a typical propagation delay of 125 ns and a dead-time of approximately 500 ns. The driver is available in a DIP-14 or SOIC-14 package and is designed for high-speed switching applications. It provides excellent gate drive capability and ensures reliable operation of the driven MOSFETs or IGBTs. The floating channel design simplifies the high-side gate drive circuit, reducing component count and board space.

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