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Same model may have multiple batches, images only for reference.
IRGSL30B60KPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGSL30B60KPBF

Part No IRGSL30B60KPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 78A 370W TO262
Datasheet
IRGSL30B60KPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 78A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.35V @ 15V, 30A
Maximum Power Dissipation 370W
Total Switching Energy(Ets) 350μJ (on), 825μJ (off)
Input Type Standard
Gate Charge 102nC
Turn-on and Turn-off delay time 46ns/185ns
Testing Conditions 400V, 30A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Win Source Part Number 136340-IRGSL30B60KPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGSL30B60KPBF CAD Model

Description

The Infineon Technologies 136340-IRGSL30B60KPBF is an IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 78A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 78A
  • Case/Package: TO-262
  • Maximum Power Dissipation: 370W
  • Gate Charge: 102nC
  • IGBT Type: NPT
  • Input Type: Standard
  • Mounting: Through-Hole
  • Product Category: Discrete Semiconductor Product
  • Design Status: Not For New Designs
  • Supply and Demand Status: Limited

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