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IRGSL15B60KDPBF

Part No IRGSL15B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 31A 208W TO262
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 31A
Current - Collector Pulsed (Icm) 62A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 15A
Maximum Power 208W
Switching Energy 220μJ (on), 340μJ (off)
Input Type Standard
Gate Charge 56nC
Td (on/off) at 25°C 34ns/184ns
Test Condition 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 92ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188415-IRGSL15B60KDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGSL15B60KDPBF CAD Model

Description

The Infineon Technologies 1188415-IRGSL15B60KDPBF is a Discrete Semiconductor Product that has an obsolete status.

  • Device Type: NPT IGBT
  • Maximum Collector Current: 31A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supply and Demand Status: Limited
  • Product Status: Obsolete
  • Maximum Power: 208W
  • Vce(on): 2.2V @ 15V, 15A

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