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IRGS4B60KD1TRRP

Part No IRGS4B60KD1TRRP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 11A 63W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 11A
Pulsed Collector Current 22A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 4A
Maximum Power Dissipation 63W
Total Switching Energy(Ets) 73μJ (on), 47μJ (off)
Input Type Standard
Gate Charge 12nC
Turn-on and Turn-off delay time 22ns/100ns
Testing Conditions 400V, 4A, 100 Ohm, 15V
Reverse Recovery Time (trr) 93ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 069683-IRGS4B60KD1TRRP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGS4B60KD1TRRP CAD Model

Description

The IRGS4B60KD1TRRP is an NPT IGBT semiconductor device manufactured by Infineon Technologies.

  • Supply and Demand Status: Balanced
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Operating Temperature Range: -55 to 175 degrees Celsius
  • Package: D2PAK
The device is suitable for applications requiring a low-power IGBT.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1631 $58.1550
125+ $0.9540 $119.2500
190+ $0.9240 $175.5600
260+ $0.8951 $232.7260
335+ $0.8651 $289.8085
450+ $0.7750 $348.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,200 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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