IRGP30B60KD-E Infineon Technologies
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.35V @ 15V, 30A
Maximum Power Dissipation 304W
Total Switching Energy(Ets) 350μJ (on), 825μJ (off)
Input Type Standard
Gate Charge 102nC
Turn-on and Turn-off delay time 46ns/185ns
Testing Conditions 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 125ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 069672-IRGP30B60KD-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGP30B60KD-E CAD Model

Description

The Infineon Technologies IRGP30B60KD-E is a high-performance IGBT transistor that comes in a TO-247AD package. It has a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 60A.

  • IGBT Type: NPT
  • Input Type: standard
  • Reverse Recovery Time: 125ns
  • Gate Charge: 102nC
  • Total Switching Energy (on): 350μJ
  • Total Switching Energy (off): 825μJ
  • Turn-on Delay Time: 46ns
  • Turn-off Delay Time: 185ns
  • Application: suitable for use in discrete semiconductor products.
  • Supply and Demand Status: balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.5036 $66.5684
46+ $2.8746 $132.2316
70+ $2.7849 $194.9430
96+ $2.6951 $258.7296
125+ $2.6052 $325.6500
167+ $2.3358 $390.0786
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 665 pieces
MOQ: 19 pcs
Order Increment : 1 piece
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