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IRGP20B120UD-EP

Part No IRGP20B120UD-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 40A 300W TO247AD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 40A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 4.85V @ 15V, 40A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 850μJ (on), 425μJ (off)
Input Type Standard
Gate Charge 169nC
Testing Conditions 600V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr) 300ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 1047350-IRGP20B120UD-EP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP20B120UD-EP CAD Model

Description

The Infineon Technologies 1047350-IRGP20B120UD-EP is a through-hole IGBT transistor with a reverse recovery time (trr) of 300ns. It is a standard input type NPT IGBT with a gate charge of 169nC.

  • Reverse Recovery Time (trr): 300ns
  • Input Type: Standard NPT
  • Gate Charge: 169nC
  • Collector-Emitter Saturation Voltage (Max): 4.85V @ 15V, 40A
  • Total Switching Energy (Ets): 850μJ (on), 425μJ (off)
  • Maximum Collector Current: 40A
  • Collector-Emitter Breakdown Voltage (VCEO): 1200V
  • Maximum Power Dissipation: 300W
  • Testing Conditions: 600V, 20A, 5 Ohm, 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7711 $58.6266
15+ $8.0173 $120.2595
23+ $7.7668 $178.6364
31+ $7.5163 $233.0053
40+ $7.2658 $290.6320
54+ $6.5141 $351.7614
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Availability: 7,500 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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