The Infineon Technologies IRGB6B60KDPBF is a high-performance IGBT transistor that comes in a TO-220AB package.

• Maximum Collector-Emitter Breakdown Voltage: 600V
• Maximum Collector Current: 13A
• IGBT Type: NPT
• Input Type: Standard
• Reverse Recovery Time: 70ns
• Gate Charge: 18.2nC
• Total Switching Energy (on): 110μJ
• Total Switching Energy (off): 135μJ
• Turn-On Delay Time: 25ns
• Turn-Off Delay Time: 215ns

This IGBT transistor is suitable for use in discrete semiconductor products. It is not recommended for new designs and has an estimated EOL date of obsolete/end of life. The supply and demand status is balanced.